Abstract
Development of accelerator technologies capable of delivering highly stable and collimated ion beam currents, ranging from a few μA to 100 mA, and incident ion energies, ranging from 100 eV to ~10 MeV, have provided a broad and capable technology for fabrication of ICs for logic, memory, and analog operations, as well as an increasingly varied array of optical sensors and imaging devices. This paper reviews the major types of accelerators, ion sources, and scanning methods used in contemporary practice for ion implantation for electronic applications.